_Suzhou Nanowin Science and Technology Co.,Ltd

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4 inch Free-Standing GaN Substrates
2 inch Free-Standing GaN Substrates（Un-doped）
2 inch Free-Standing GaN Substrates（Si-doped）
2 inch Free-Standing GaN Substrates（Fe-doped）

APPLICATION

SEMICONDUCTOR LIGHTING
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BLUE AND GREEN LD
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HIGH POWER ELECTRONIC POWER DEVICE
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NEWS

: High Quality Free-Standing GaN Substrates have a Significant Impact on Schottky Barrier Diodes
Xinku Liu and his team reported the vertical GaN Schottky barrier diodes (SBDs) on 2” freestanding (FS) GaN wafer from Suzhou Nanowin Science and Technology Co.,Ltd. In the SBDs they developed.
2018-6-13 11:14:35

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