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MESFET,HFET,MODFET,HBT;RF Power Transistors;Hight Frequency MMICs;Hight Voltage Electronics;Hight Temperature Electronics;Mixed signal GaN/Si Integration.
GaN has both high breakdown electric field(like SiC) and high frequency(like GaAs/GeSi/InP). It has more potential in increasing the work frequency of power electronic devices than SiC, and the application future is better than SiC.